Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 1069
Release: 2010-04-02
Genre: Technology & Engineering
ISBN: 9780387473147

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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Unknown
Total Pages: 1086
Release: 2019
Genre: Power semiconductors
ISBN: 3319939890

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This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.

Modern Power Devices

Modern Power Devices
Author: B. Jayant Baliga
Publsiher: Wiley-Interscience
Total Pages: 476
Release: 1987-03-10
Genre: Technology & Engineering
ISBN: UOM:39015011837039

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Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.

Advanced Power MOSFET Concepts

Advanced Power MOSFET Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 562
Release: 2010-06-26
Genre: Technology & Engineering
ISBN: 9781441959171

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During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Power Electronics Semiconductor Devices

Power Electronics Semiconductor Devices
Author: Robert Perret
Publsiher: John Wiley & Sons
Total Pages: 576
Release: 2013-03-01
Genre: Technology & Engineering
ISBN: 9781118623206

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This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author: B. Jayant Baliga
Publsiher: Woodhead Publishing
Total Pages: 418
Release: 2018-10-17
Genre: Technology & Engineering
ISBN: 9780081023075

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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Entrepreneurship in Power Semiconductor Devices Power Electronics and Electric Machines and Drive Systems

Entrepreneurship in Power Semiconductor Devices  Power Electronics  and Electric Machines and Drive Systems
Author: Krishnan Ramu
Publsiher: CRC Press
Total Pages: 430
Release: 2020-12-08
Genre: Technology & Engineering
ISBN: 9781000287868

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Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book. Each field’s emerging applications, current market and future market forecasts are introduced to understand the basis and need for emerging startups. Practical learning is introduced in: (i) power semiconductor devices entrepreneurship through the prism of 20 startups in detail, (ii) power electronics entrepreneurship through 28 startup companies arranged under various application fields and (iii) electric machines and drive systems entrepreneurship through 15 startups in electromagnetic and 1 in electrostatic machines and drive systems. The book: (i) demystifies entrepreneurship in a practical way to equip engineers and students with entrepreneurship as an option for their professional growth, pursuit and success; (ii) provides engineering managers and corporate-level executives a detailed view of entrepreneurship activities in the considered three fields that may potentially impact their businesses, (iii) provides entrepreneurship education in an electrical engineering environment and with direct connection and correlation to their fields of study and (iv) endows a methodology that can be effectively employed not only in the three illustrated fields of electrical engineering but in other fields as well. This book is for electrical engineering students and professionals. For use in undergraduate and graduate courses in electrical engineering, the book contains discussion questions, exercise problems, team and class projects, all from a practical point of view, to train students and assist professionals for future entrepreneurship endeavors.

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
Author: D. Nirmal,J. Ajayan,Patrick J. Fay
Publsiher: CRC Press
Total Pages: 302
Release: 2021-12-10
Genre: Technology & Engineering
ISBN: 9781000475364

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This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

Power Semiconductors

Power Semiconductors
Author: Stefan Linder
Publsiher: EPFL Press
Total Pages: 267
Release: 2006-06-02
Genre: Technology & Engineering
ISBN: 0824725697

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The aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Springer
Total Pages: 1072
Release: 2010-11-16
Genre: Technology & Engineering
ISBN: 0387564403

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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Silicon Carbide Power Devices

Silicon Carbide Power Devices
Author: B Jayant Baliga
Publsiher: World Scientific
Total Pages: 528
Release: 2006-01-05
Genre: Technology
ISBN: 9789814478946

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Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.

Gallium Nitride and Silicon Carbide Power Devices

Gallium Nitride and Silicon Carbide Power Devices
Author: B Jayant Baliga
Publsiher: World Scientific Publishing Company
Total Pages: 592
Release: 2016-12-12
Genre: Electronic Book
ISBN: 9789813109421

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During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology
Author: Tsunenobu Kimoto,James A. Cooper
Publsiher: John Wiley & Sons
Total Pages: 400
Release: 2014-11-24
Genre: Technology & Engineering
ISBN: 9781118313527

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Advanced Power Rectifier Concepts

Advanced Power Rectifier Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 352
Release: 2009-06-16
Genre: Technology & Engineering
ISBN: 0387755896

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During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.

Wide Bandgap Power Semiconductor Packaging

Wide Bandgap Power Semiconductor Packaging
Author: Katsuaki Suganuma
Publsiher: Woodhead Publishing
Total Pages: 240
Release: 2018-05-28
Genre: Technology & Engineering
ISBN: 9780081020951

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Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates