Plasma Etching Processes for CMOS Devices Realization

Plasma Etching Processes for CMOS Devices Realization
Author: Nicolas Posseme
Publsiher: Elsevier
Total Pages: 136
Release: 2017-01-25
Genre: Technology & Engineering
ISBN: 9780081011966

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Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Miniaturized Transistors

Miniaturized Transistors
Author: Lado Filipovic,Tibor Grasser
Publsiher: MDPI
Total Pages: 202
Release: 2019-06-24
Genre: Technology & Engineering
ISBN: 9783039210107

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Plasma Etching Processes for Interconnect Realization in VLSI

Plasma Etching Processes for Interconnect Realization in VLSI
Author: Nicolas Posseme
Publsiher: Elsevier
Total Pages: 128
Release: 2015-04-14
Genre: Technology & Engineering
ISBN: 9780081005903

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This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions. This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Handbook for III V High Electron Mobility Transistor Technologies

Handbook for III V High Electron Mobility Transistor Technologies
Author: D. Nirmal,J. Ajayan
Publsiher: CRC Press
Total Pages: 430
Release: 2019-05-14
Genre: Science
ISBN: 9780429862526

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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices

SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices
Author: John D. Cressler
Publsiher: CRC Press
Total Pages: 264
Release: 2017-12-19
Genre: Technology & Engineering
ISBN: 9781420066869

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What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Advanced Silicon Carbide Devices and Processing

Advanced Silicon Carbide Devices and Processing
Author: Stephen Saddow,Francesco La Via
Publsiher: BoD – Books on Demand
Total Pages: 258
Release: 2015-09-17
Genre: Technology & Engineering
ISBN: 9789535121688

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Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Encyclopedia of Plasma Technology Two Volume Set

Encyclopedia of Plasma Technology   Two Volume Set
Author: J. Leon Shohet
Publsiher: CRC Press
Total Pages: 1656
Release: 2016-12-12
Genre: Technology & Engineering
ISBN: 9781000031706

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Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]

New Physical Problems In Electronic Materials Proceedings Of The 6th Iscmp

New Physical Problems In Electronic Materials   Proceedings Of The 6th Iscmp
Author: Borissov M,Kirov Nikolav,Marshall J M
Publsiher: #N/A
Total Pages: 572
Release: 1991-03-22
Genre: Electronic Book
ISBN: 9789814569477

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This proceedings feature lectures and contributions identifying and exploring major new trends in contemporary materials science, in particular electronic and optoelectronic materials. Various aspects of the preparative technology, characterisation techniques, physical and physicochemical properties and device applications of new electronic and optoelectronic materials (amorphous, polycrystalline, crystalline semiconductors, magnetic media, high Tc superconductors, polymeric thin films, ferroelectrics, etc.) are treated via in depth reviews.

Chemical Abstracts

Chemical Abstracts
Author: Anonim
Publsiher: Unknown
Total Pages: 135
Release: 2002
Genre: Chemistry
ISBN: UOM:39015057321377

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1986 Proceedings

1986 Proceedings
Author: Anonim
Publsiher: Unknown
Total Pages: 536
Release: 1986
Genre: Integrated circuits
ISBN: UCSD:31822002953651

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Micro LEDs

Micro LEDs
Author: Anonim
Publsiher: Academic Press
Total Pages: 410
Release: 2021-06-04
Genre: Technology & Engineering
ISBN: 9780128230633

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MicroLEDs', Volume 106 is currently recognized as the ultimate display technology and one of the fastest-growing technologies in the world as technology giants utilize it on a wide-ranging set of products. This volume combines contributions from MicroLED pioneers and world’s leading experts in the field who focus on the MicroLED development, current cutting-edge technologies of pursuing for realizing MicroLED large flat panel displays and televisions, virtual reality and 3D displays, light source for LI-FI data communications, neural interface and optogenetics, and future MicroLED technology trends. Contains contributions from original MicroLED inventors and pioneers Provides the most comprehensive and updated status of MicroLED technological advancements and applications Updates on future MicroLED technology trends

CMOS Cantilever Sensor Systems

CMOS Cantilever Sensor Systems
Author: D. Lange,O. Brand,H. Baltes,Henry Baltes
Publsiher: Springer Science & Business Media
Total Pages: 142
Release: 2002-07-23
Genre: Science
ISBN: 3540431438

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This book introduces the use of industrial CMOS processes to produce arrays of nanomechanical cantilever transducers with on-chip driving and signal conditioning circuitry. These cantilevers are familiar from Scanning Probe Microscopy (SPM) and allow the sensitive detection of physical quantities such as forces and mass changes. The book is divided into three parts. First fabrication aspects and the mechanisms of cantilever resonators are introduced. Of the possible driving and sensing mechanisms, electrothermal and magnetic excitation, as well as piezoresistive detection and the use of MOS transistors for the deflection detection are introduced. This is followed by two application examples: The use of resonant cantilevers for the mass-sensitive detection of volatile organic compounds, and force sensor arrays for parallel Scanning Atomic Force Microscopy (AFM) of large areas.

MEMS and Nanotechnology Volume 5

MEMS and Nanotechnology  Volume 5
Author: Gordon Shaw III,Barton C. Prorok,LaVern Starman,Cosme Furlong
Publsiher: Springer Science & Business Media
Total Pages: 134
Release: 2013-09-17
Genre: Technology & Engineering
ISBN: 9783319007809

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MEMS and Nanotechnology, Volume 5: Proceedings of the 2013 Annual Conference on Experimental and Applied Mechanics, the fifth volume of eight from the Conference, brings together contributions to this important area of research and engineering. The collection presents early findings and case studies on a wide range of areas, including: Microelectronics Packaging Single Atom/Molecule Mechanical Testing MEMS Devices & Fabrication In-Situ Mechanical Testing Nanoindentation Experimental Analysis of Low-Dimensional Materials for Nanotechnology

SiGe and Ge

SiGe and Ge
Author: David Louis Harame
Publsiher: The Electrochemical Society
Total Pages: 1248
Release: 2006-01-01
Genre: Electronic apparatus and appliances
ISBN: 9781566775076

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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

The Role of Surface Transport of Reaction Precursors in Plasma Etching and Deposition

The Role of Surface Transport of Reaction Precursors in Plasma Etching and Deposition
Author: Vivek Kumar Singh
Publsiher: Unknown
Total Pages: 350
Release: 1993
Genre: Electronic Book
ISBN: STANFORD:36105004435561

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